HN3C10FUTE85LF

HN3C10FUTE85LF

Image is for reference, please contact us to get the real picture

Manufacturer Part HN3C10FUTE85LF
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description RF TRANS 2 NPN 12V 7GHZ US6
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - RF
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union

Availability

InStock 111
UnitPrice $ 0.54000

HN3C10FUTE85LF Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

HN3C10FUTE85LF Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Gain:11.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Current - Collector (Ic) (Max):80mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

Shopping Guide

Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.


Payment
Payment

TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.

Featured Products

Copyright © 2024 ZHONG HAI SHENG TECHNOLOGY LIMITED All Rights Reserved.

Privacy Statement | Terms Of Use | Quality Warranty

Top